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FPD2000AS
2W PACKAGED POWER PHEMT
FEATURES:
* * * * * * * 33 dBm Output Power (P1dB) @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
Datasheet v3.0
PACKAGE:
GENERAL DESCRIPTION:
The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.
TYPICAL APPLICATIONS:
* * Drivers or output stages in PCS/Cellular base station transmitter amplifiers Power applications in WLL/WLAN and WiMax (3.5GHz) amplifiers
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression P1dB
SYMBOL
CONDITIONS
VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 350 mA
MIN
32
TYP
33
MAX
UNITS
dBm
Power Gain at dB Gain Compression
G1dB
S and L tuned for Optimum IP3 VDS = 10 V; IDS = 350 mA
12.5
14.0
Maximum Stable Gain MSG S21/S12 Power-Added Efficiency PAE at 1dB Gain Compression
20 PIN = 0dBm, 50 system VDS = 10V; IDS = 350 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 350 mA 45
dB
%
3rd-Order Intermodulation Distortion
IM3
S and L tuned for Optimum IP3 POUT = 22 dBm
-47
dBc
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance (channel-to-case)
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| CC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 4 mA IGS = 4 mA IGD = 4 mA See Note on following page 0.7 6 20
1150 1800 1200 35 0.9 85 1.4
mA mA mS A V V V
20
C/W
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
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FPD2000AS
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature 3 Total Power Dissipation PTOT See De-Rating Note below 7.6W PIN TCH TSTG Under any acceptable bias state Under any acceptable bias state Non-Operating Storage 29.5dBm 175C -40C to 150C
1
SYMBOL
VDS VGS IDS IG
TEST CONDITIONS
7 -3V < VGS < -0.5V 0V < VDS < +8V For VDS < 2V Forward / reverse current
ABSOLUTE MAXIMUM
12V -3V IDSS +15/-2mA
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 7.6 - (0.05W/C) x TPACK where TPACK= source tab lead temperature above 22C (Coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C carrier temperature: PTOT = 7.6W - (0.05 x (55 - 22)) = 5.95W 5 For optimum heat sinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package 6 Thermal Resistivity: The nominal value of 20C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads 7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point.
* *
RECOMMENDED OPERATING BIAS CONDITIONS:
* *
Drain-Source Voltage: Quiescent Current:
From 5V to 10V From 25% IDSS to 55% IDSS
2
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FPD2000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22C unless otherwise stated (VDS=10V, IDS=350mA, f=1800MHz)
Power Transfer Characteristic
34.00 3.50
70.00% 70.00%
Drain Efficiency and PAE
3.00
60.00% 60.00%
32.00
30.00
2.50
Gain Compression (dB)
Output Power (dBm)
28.00
2.00
PAE
Eff. 40.00%
26.00
Pout
Comp Point
1.50
40.00%
24.00
1.00
30.00%
30.00%
22.00
.50
20.00%
20.00%
20.00
.00
10.00%
10.00%
18.00 4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
-.50 22.00
.00% 6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
.00% 24.00
Input Power (dBm)
Input Power (dBm)
IMP roductsvs. Input P er ow
-20.00 27.00 -25.00
FPD2000AS I-V Curves
1.400
VGS = 0V
Drain-Source Current (A)
25.00
-30.00
1.200
Output Power (dBm)
IM Products (dBc)
Pt ou
Im dB 3, c
-35.00
1.000 .800
VGS = -0.25V
23.00 -40.00
VGS = -0.50V
21.00
-45.00
.600 .400 .200 .000 0.00
VGS = -0.75V
-50.00 19.00 -55.00
VGS = -1.0V VGS = -1.25V
17.00 3.00 5.00 7.00 9.00 11.00 13.00
-60.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
In u P er(d m p t ow B )
Drain-Source Voltage (V)
1.0
FPD2000AS IP3 CONTOURS 2 GHz
1.0
0.8
FPD2000AS POWER CONTOURS 2 GHz
0 .6
IP3_dBm = 44 dBm
2.0
0.6
IP3_dBm = 42 dBm
3.0
2.
0
Swp Max 244
Swp Max 181
0. 8
Pout_dBm = 22 dBm
3. 0
IP3_dBm = 50 dBm
4 .0
0 .2
4.0
0 .2
5.0
IP3_dBm = 40 dBm
5.0
Pout_dBm = 32 dBm
IP3_dBm = 52 dBm
10.0 3.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0 5.0
10 .0
10 .0
Pout_dBm = 34 dBm
Pout_dBm = 30 dBm
. -0
4
. -0
4
.0 -2
-0.6
-0 .6
Pout_dBm = 26 dBm
Swp Min 1
.0 -2
-0 .8
-0 .8
-1.0
Pout_dBm = 24 dBm
NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maxima for best linearity located at: L = 15 + j4.5 and L = 28 - j25 with S = 9.5 - j4
3
NOTE: Power contours measured at constant input power, level set to meet nominal P1dB rating at optimum match point. Optimum match: S = 3 - j6 and L = 11 - j3
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-1.0
-3 .0
-4 .0
IP3_dBm = 46 dBm
-3. 0
Pout_dBm = 28 dBm
Swp Min 1
-5 .0
-4 .0
-5 .0
-0.2
-0 .2
-10 .0
IP3_dBm = 48 dBm
-1 0.0
0
10.0
0.2
0.6
0.8
1.0
0.4
3.0
5.0
2.0
4.0
0
Drain Efficiency (%)
50.00%
50.00%
PAE (%)
0 .4
0 .4
FPD2000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22C unless otherwise stated (VDS=10V, IDS=200mA)
FPD2000AS at VDS = 10V and IDS = 350mA
30.0
40
FPD2000AS at VDS = 10V and IDS = 350mA
35
25.0
30
20.0
Power (dBm) or Gain (dB)
25
P1dB G1dB
Gain
15.0
20
S21 MSG
10.0
15
10
5.0
5
0.0 0 500 1000 1500 2000 2500 3000 3500 4000
0 500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
Frequency (MHz)
AS PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT:
(dimensions in millimeters - mm)
3.8 1.90.25 2.20.25 0.35 2 Plcs.
4.4
3.8
1.3 2 Plcs. 3.2 Epoxy Fillet 1.5 0.15
All Dimnesions in mm General Tolerance: .xx 0.05 .x 0.15 For best positional accuracy in auto pick and place device should be referenced directly from the leads
0.5 2 Plcs.
0 to 0.3 4 Plcs.
0.35 2 Plcs.
4
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FPD2000AS
Datasheet v3.0
REFERENCE DESIGN (3.4 - 3.5GHZ):
PARAMETER
Frequency Gain P1dB IM3 @22dBm Pout SCL S11 S22 Vd Vg Id
UNIT
GHz dB dBm dBc dB dB V V mA
PERFORMANCE
3.4 to 3.5 10 33 -45dBc -6 -15 10 -0.6 to -0.9 350
SCHEMATIC:
-Vg
1.0uF
Vd
1.0uF 10pF
FPD2000AS EVAL Board Schematic
10pF 20 Ohm Z10 Z9 Z15 Z14
1 3
Z16
15pF
1
Z1
2 4 3 1
Z5
2 4 3 1
Z8
2 4
15pF Z18 Z19
RF OUT (50 Ohm)
RF IN (50 Ohm)
Z2 Z1
Z3
Z4 Z5
Z6
Z7 Z8
Z11
Z12
2 4
3
Z13 Z17 Z14
Desc. Value 0.050" x 1.000" Microstrip Z1 W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross Z2 0.020" x 0.100" Microstrip Z3 W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross Z4 0.050" x 0.100" Microstrip Z5 0.020" x 0.440" Microstrip Z6 W1=0.020" W2=0.085" W3=0.020" W4=0.085" Microstrip Cross Z7 0.085" x 0.254" Microstrip Z8 0.015" x 0.296" Microstrip Z9 0.360" x 90 Microstrip Radial Stub Z10 0.420" x 90 Microstrip Radial Stub Z16 Z11, Z12 0.040" x 0.040" Microstrip W1=0.090" W2=0.200" W3=0.090" W4=0.200" Microstrip Cross Z13 0.200" x 0.100" Microstrip Z14 0.015" x 0.450" Microstrip Z15 0.090" x 0.190" Microstrip Z17 0.140" x 0.480" Microstrip Z18 0.050" x 0.100" Microstrip Z19
5
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Tel: +44 (0) 1325 301111
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FPD2000AS
Datasheet v3.0
BOARD LAYOUT (3.4 - 3.5GHZ):
VD
RF IN
EV-SP-000044-001
NOTE: AutoCADTM drawing available on request
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
S-PARAMETERS:
Note: Biased @ 10V, 350mA
FREQ-GHZ 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00
S11MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.86 0.86 0.86 0.86 0.85 0.85 0.85 0.85 0.85 0.85
S11ANG -151.40 -158.58 -164.23 -168.91 -172.86 -176.35 -179.44 177.74 175.11 172.67 170.35 168.17 166.09 164.11 162.17 160.30 158.48 156.67 155.01 153.30 151.64 150.05 148.54 147.00 145.28 143.93 142.45 141.02 139.58 138.21 136.87 135.65 134.47 129.67 127.78 125.78 123.84 121.77 119.75 117.52 115.54 113.68 111.67 109.46 107.26 105.01
S21MAG 12.52 10.57 9.14 8.06 7.20 6.51 5.93 5.45 5.05 4.70 4.40 4.13 3.89 3.69 3.50 3.34 3.19 3.05 2.93 2.81 2.71 2.61 2.52 2.44 2.36 2.29 2.23 2.16 2.11 2.05 2.00 1.95 1.90 1.94 1.91 1.88 1.84 1.81 1.79 1.76 1.74 1.71 1.69 1.67 1.65 1.63
S21ANG 96.06 91.14 86.95 83.20 79.78 76.60 73.62 70.77 68.02 65.34 62.72 60.18 57.70 55.24 52.76 50.37 48.01 45.65 43.35 41.02 38.72 36.43 34.20 31.95 29.69 27.42 25.22 23.03 20.81 18.59 16.40 14.24 12.24 8.92 6.50 3.95 1.48 -0.89 -3.25 -5.69 -8.29 -10.69 -13.07 -15.55 -18.04 -20.54
S12MAG 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07
S12ANG 23.09 21.17 20.24 19.30 18.90 18.57 18.50 18.46 18.41 18.34 18.30 18.25 18.34 18.22 18.00 18.00 18.01 17.70 17.42 17.44 16.81 16.69 16.42 16.22 15.56 15.49 14.94 14.53 14.10 13.33 12.89 12.15 11.80 10.05 9.06 7.84 6.72 5.60 4.45 3.33 2.14 1.05 -0.20 -1.36 -2.60 -3.94
S22MAG 0.41 0.41 0.42 0.42 0.42 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.42 0.42 0.42 0.42 0.42 0.42 0.41 0.41 0.41 0.41 0.41 0.41 0.41
S22ANG -163.97 -168.16 -171.39 -174.09 -176.33 -178.37 179.80 178.18 176.66 175.27 173.92 172.69 171.34 170.15 168.95 167.90 166.84 165.65 164.73 163.72 162.73 161.59 160.71 159.70 158.58 157.76 156.78 155.89 154.94 154.07 153.19 152.58 151.58 148.11 146.79 145.39 143.97 142.63 141.09 139.29 137.87 136.50 135.06 133.46 131.82 130.21
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
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FPD2000AS
Datasheet v3.0
S-PARAMETERS (CONT.):
Note: Biased @ 10V, 350mA
FREQ-GHZ 5.10 5.20 5.30 5.40 5.50 5.60 5.70 5.80 5.90 6.00 6.10 6.20 6.30 6.40 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20 7.30 7.40 7.50 7.60 7.70 7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50 8.60 8.70 8.80 8.90 9.00 9.10 9.20 9.30 9.40 9.50 9.60 9.70 9.80 9.90 10.00
S11MAG 0.85 0.85 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.82 0.82 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.83 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.84 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85
S11ANG 102.67 100.31 97.99 95.60 93.23 90.81 88.26 85.69 83.17 80.66 78.11 75.46 72.84 70.23 67.48 64.77 62.13 59.92 57.56 54.88 52.08 49.37 46.66 44.02 41.53 38.88 36.18 33.64 31.05 28.44 25.95 23.49 21.07 18.55 16.14 13.74 11.39 8.95 6.61 4.26 1.89 -0.35 -2.77 -5.00 -7.40 -9.69 -12.14 -14.66 -17.20 -19.62
S21MAG 1.61 1.59 1.58 1.56 1.54 1.52 1.50 1.49 1.47 1.45 1.44 1.42 1.40 1.39 1.37 1.35 1.33 1.32 1.32 1.31 1.29 1.28 1.26 1.24 1.23 1.22 1.20 1.19 1.17 1.16 1.15 1.13 1.12 1.11 1.09 1.08 1.07 1.06 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.97 0.96 0.95 0.94
S21ANG -23.07 -25.68 -28.24 -30.82 -33.39 -36.00 -38.59 -41.22 -43.83 -46.44 -49.07 -51.79 -54.48 -57.14 -59.81 -62.42 -64.76 -66.68 -69.52 -72.55 -75.44 -78.19 -80.88 -83.44 -86.01 -88.90 -91.67 -94.33 -97.01 -99.67 -102.28 -104.88 -107.55 -110.22 -112.79 -115.39 -117.96 -120.52 -123.07 -125.62 -128.14 -130.70 -133.36 -135.96 -138.56 -141.19 -143.84 -146.52 -149.12 -151.71
S12MAG 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.14 0.14 0.14 0.14 0.14 0.14 0.15 0.15 0.15 0.15
S12ANG -5.34 -6.87 -8.40 -9.89 -11.46 -12.98 -14.50 -16.11 -17.66 -19.28 -21.12 -23.29 -25.03 -26.82 -28.64 -30.28 -31.41 -30.95 -32.92 -35.78 -38.26 -40.46 -42.52 -44.17 -45.73 -48.21 -50.47 -52.59 -54.72 -56.85 -58.91 -60.91 -62.95 -65.03 -66.97 -68.91 -70.86 -72.85 -74.90 -76.87 -78.87 -80.90 -83.07 -85.21 -87.34 -89.56 -91.85 -94.12 -96.23 -98.00
S22MAG 0.41 0.41 0.41 0.41 0.41 0.40 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.41 0.40 0.41 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.44 0.44 0.44 0.44 0.45 0.45 0.45 0.45 0.46 0.46 0.46 0.46 0.46 0.46 0.46 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.48 0.48
S22ANG 128.50 126.81 125.07 123.35 121.57 119.83 117.91 116.04 114.18 112.34 110.62 108.63 106.57 104.45 102.37 100.18 98.06 97.13 96.12 94.11 91.84 89.62 87.37 85.28 83.74 81.63 79.39 77.14 74.97 72.73 70.54 68.43 66.26 64.01 61.79 59.50 57.23 55.01 52.71 50.40 48.10 45.92 43.66 41.26 38.92 36.40 33.98 31.53 29.14 26.66
8
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FPD2000AS
Datasheet v3.0
TAPE AND REEL DIMENSIONS AND PART ORIENTATION
f xxx xxx
PACKAGE MARKING CODE
Example: f1ZD P2F
f = Filtronic 1ZD = Lot / Date Code
P2F = Status, Part Code, Part Type Parts per reel 178mm = 1000 330mm = 2500
9
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD2000AS
Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Package leads are gold plated.
ORDERING INFORMATION:
PART NUMBER
FPD2000AS FPD2000AS-EB
DESCRIPTION
Packaged pHEMT Packaged pHEMT evaluation board EB-2000AS-AB (880MHz) EB-2000AS-AA (1.85GHz) EB-2000AS-AD (2.14GHz) EB-2000AS-AE (2.4GHz) EB-2000AS-AF (2.44GHz) EB-2000AS-AG (2.5 to 2.7GHz) EB-2000AS-AH (3.5GHz)
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing.
ESD/MSL RATING:
These devices should be treated as Class 1A (250-500 V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. The device has a MSL rating of Level 1. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermatic solid state surface mount devices
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device model are available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
10
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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